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BD956 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # BD956
Description  NPN PLASTIC POWER TRANSISTORS
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BD956 Datasheet(HTML) 2 Page - Continental Device India Limited

  BD956 Datasheet HTML 1Page - Continental Device India Limited BD956 Datasheet HTML 2Page - Continental Device India Limited BD956 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current (Peak value)
ICM
max.
8.0
A
Total power dissipation upto Tmb=25°C
Ptot
max.
40
W
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
–65 to +150
°C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
70
K /W
From junction to mounting base
Rth j–mb
3.12
K /W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
949 951 953 955
950 952 954 956
Collector cutoff current
IE = 0; VCB = VCBO
ICBO
max.
50
µA
IE = 0; VCB = ½ VCBO; Tj = 150°C
ICBO
max.
1.0
mA
IB = 0; VCE = ½ VCEO
ICEO
max.
0.1
mA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
0.2
mA
Breakdown voltages
IC = 1 mA; IB = 0
VCEO
min. 60
80
100 120
V
IC = 1 mA; IE = 0
VCBO
min. 60
80
100 120
V
IE = 1 mA; IC = 0
VEBO
min.
5.0
V
Saturation voltage
IC = 2 A; IB = 0.2 A
VCEsat*
max.
1.0
V
Base emitter on voltage
IC = 2 A; VCE = 4 V
VBE(on)*
max.
1.4
V
D.C. current gain
IC = 0.5 A; VCE = 4 V
hFE*
min.
40
IC = 2 A; VCE = 4 V
hFE*
min.
20
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1 MHz
fT
min.
3
MHz
Switching time
VCC = 20 V; IC = 1 A
Icon = 1A; IBon = –IBoff = 0.1A
RL = 20Ω
Turn on time
NPN
ton
typ.
0.3
µs
Turn off time
NPN
toff
typ.
1.5
µs
PNP
ton
typ.
0.1
µs
PNP
toff
typ.
0.4
µs
* Measured under pulse conditions: tp ≤ 300µs; duty cycle ≤ 2%
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956



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