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MJ411 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJ411
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ411 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  MJ411 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJ411 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
MJ411
DESCRIPTION
·
High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.)
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8 V(Max)@ IC = 1A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for medium to high voltage inverters, converters,
regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.75
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current
10
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ, Tstg
Operating and Storage Junction
Temperature Range
-65~+200
℃


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