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L3000N Datasheet(PDF) 14 Page - STMicroelectronics |
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L3000N Datasheet(HTML) 14 Page - STMicroelectronics |
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14 / 32 page ![]() EXTERNAL COMPONENT LIST FOR THE L3000N Component Involved Parameter or Function Ref Value RH 22.5K Ω ±2% Bias Resistor RP 30 to 100 Ω Lines Series Resistor CDVB 47 µF - 20V ±20% Battery Voltage Rejection CVB+ 0.1 µF - 100V ±20% Positive Battery Filter CVB- 0.1 µF - 100V ±20% (note 1) Negative Battery Filter DS BAT49X (note 2) Protective Shottky Diode EXTERNAL COMPONENT LIST FOR THE L3092 CVSS 0.1 µF - 15V Negative Supply Voltage Filter CVDD 0.1 µF - 15V Positive Supply Voltage Filter CAC 47 µF - 10V ±20% AC Path Decoupling ZAC 25 x (ZML - 2xRP) 2 Wire AC Impedance CCOMP AC Loop Compensation RPC 25 x (2xRP) RP Insertion Loss Compensation RDC 2 x (RFS - RP) DC Feeding Resistor (RDC > 200 Ω) RL 63.4K Ω ±1% Bias Resistor ZA K x ZML (note 3) SLIC Impedance Balancing Network ZB Line Impedance Balancing Network CINT see Table 2 (note 5) Ring Trip Detection Time Constant RT 47K Ω Resistors used only in the automatic stand-by mode. RR 47K Ω RS 1.5M Ω (note 6) CS 47nF To be used only if high common mode rejection in Aut. SBY mode and in Power Down mode is requested (note 7) CMR 100nF To be used only if Power on reset requested. The capacitor value depends on VDD rise time. Notes: 1) In case line cards with less than 7 subscribers are implemented CVB- capacitor should be equal to 680nF/N where N is the number of subscriber per card. 2) This shottky diode or equivalent is necessary to avoid damage to the device during hot insertion or in all those cases when a proper power up sequence cannot be guaranteed. In case the Shottky diode is not implemented the power sequence should guarantee that VB+ is always the last supply applied at power on and the first removed at power off. In case an other shottky diode type is adopted it must fulfill the following characteristics: VF < 450mV @ IF =n ⋅ 15mA, Tamb =25°C VF < 350mV @ IF =n ⋅ 15mA, Tamb =50°C(TjL3000 =90°C) VF < 245mV @ IF =n ⋅ 15mA, Tamb =85°C(TjL3000 = 120°C) Where n is the number of line sharing the same diode. 3) The structure of this network shall copy the SLIC output impedance multiplexed by a factor K = 10 to 25. This network must be removed when 2/4 wire conversion is implemented with 2nd generation COMBO (EG. TS5070). 4) The structure of this network shall copy the line impedance, Zline, multiplexed by a factor K = 10 to 25 and compensate the effect of CCOMP on transhybrid rejection. This network must be removed when 2/4 wire conversion is implemented with 2nd generation COMBO (EG. TS5070). 5) The CINT value depends on the ringing frequency FR. 6) Value related to Vb = 48V application, for application with different battery voltages should be properly dimensioned (see Fig.4). 7) Ex.: For line leakage resistance to GND equal to 500K Ω, the common mode rejection is 5VP without CS and about 10Vp with CS - Fr (Hz) 16/18 19/21 22/27 28/32 33/38 39/46 47/55 56/68 CINT (nF) 680 580 470 390 330 270 220 180 The CINT value can be optimized experimentally for each application choosing the lower value that in correspondance of the lower ringing frequency, the minimum line lenght and the higher number of ringers doesn’t produce false off-hook detection. 1 2 Πfo ( 50 RP ) with fo = 200KHz ( K x Zline ) ⁄⁄ ( 25 K x CCOMP )(note 4) Table 2 L3000N - L3092 14/32 |
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