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L3000N Datasheet(PDF) 14 Page - STMicroelectronics

Part # L3000N
Description  SLIC KIT OPTIMIZED FOR APPLICATIONS WITH BOTH FIRST AND SECOND GENERATION COMBOS
PDF  32 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L3000N Datasheet(HTML) 14 Page - STMicroelectronics

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EXTERNAL COMPONENT LIST FOR THE L3000N
Component
Involved Parameter or Function
Ref
Value
RH
22.5K
Ω ±2%
Bias Resistor
RP
30 to 100
Lines Series Resistor
CDVB
47
µF - 20V ±20%
Battery Voltage Rejection
CVB+
0.1
µF - 100V ±20%
Positive Battery Filter
CVB-
0.1
µF - 100V ±20% (note 1)
Negative Battery Filter
DS
BAT49X (note 2)
Protective Shottky Diode
EXTERNAL COMPONENT LIST FOR THE L3092
CVSS
0.1
µF - 15V
Negative Supply Voltage Filter
CVDD
0.1
µF - 15V
Positive Supply Voltage Filter
CAC
47
µF - 10V ±20%
AC Path Decoupling
ZAC
25 x (ZML - 2xRP)
2 Wire AC Impedance
CCOMP
AC Loop Compensation
RPC
25 x (2xRP)
RP Insertion Loss Compensation
RDC
2 x (RFS - RP)
DC Feeding Resistor (RDC > 200
Ω)
RL
63.4K
Ω ±1%
Bias Resistor
ZA
K x ZML (note 3)
SLIC Impedance Balancing Network
ZB
Line Impedance Balancing Network
CINT
see Table 2 (note 5)
Ring Trip Detection Time Constant
RT
47K
Resistors used only in the automatic stand-by mode.
RR
47K
RS
1.5M
Ω (note 6)
CS
47nF
To be used only if high common mode rejection in Aut. SBY
mode and in Power Down mode is requested (note 7)
CMR
100nF
To be used only if Power on reset requested. The capacitor
value depends on VDD rise time.
Notes:
1) In case line cards with less than 7 subscribers are implemented CVB- capacitor should be equal to 680nF/N where N is the number of
subscriber per card.
2) This shottky diode or equivalent is necessary to avoid damage to the device during hot insertion or in all those cases when a proper power
up sequence cannot be guaranteed. In case the Shottky diode is not implemented the power sequence should guarantee that VB+ is always
the last supply applied at power on and the first removed at power off.
In case an other shottky diode type is adopted it must fulfill the following characteristics:
VF < 450mV @ IF =n
⋅ 15mA, Tamb =25°C
VF < 350mV @ IF =n
⋅ 15mA, Tamb =50°C(TjL3000 =90°C)
VF < 245mV @ IF =n
⋅ 15mA, Tamb =85°C(TjL3000 = 120°C)
Where n is the number of line sharing the same diode.
3) The structure of this network shall copy the SLIC output impedance multiplexed by a factor K = 10 to 25. This network must be removed
when 2/4 wire conversion is implemented with 2nd generation COMBO (EG. TS5070).
4) The structure of this network shall copy the line impedance, Zline, multiplexed by a factor K = 10 to 25 and compensate the effect of CCOMP
on transhybrid rejection. This network must be removed when 2/4 wire conversion is implemented with 2nd generation COMBO (EG. TS5070).
5) The CINT value depends on the ringing frequency FR.
6) Value related to Vb = 48V application, for application with different battery voltages should be properly dimensioned (see Fig.4).
7) Ex.: For line leakage resistance to GND equal to 500K
Ω, the common mode rejection is 5VP without CS and about 10Vp with CS -
Fr (Hz)
16/18
19/21
22/27
28/32
33/38
39/46
47/55
56/68
CINT (nF)
680
580
470
390
330
270
220
180
The CINT value can be optimized experimentally
for each application choosing the lower value that
in correspondance of the lower ringing frequency,
the minimum line lenght and the higher number of
ringers doesn’t produce false off-hook detection.
1
2
Πfo ( 50 RP
)
with fo = 200KHz
( K x Zline ) ⁄⁄ (
25
K
x CCOMP
)(note 4)
Table 2
L3000N - L3092
14/32



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