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FTB772F Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTB772F Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  2013. 01. 03 1/2 SEMICONDUCTOR TECHNICAL DATA FTB772F Revision No : 0 FTB772F PNP TRANSISTOR FEATURES MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation(Tc=25℃) RӨJA Thermal Resistance, junction to Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100 μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A 60 400 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency fT VCE= -5V, IC=-0.1A f =10MHz 50 80 MHz CLASSIFICATION OF hFE Rank R G Y O R Range 60-120 100-200 160-320 200-400 0.5 W SOT-89 G D A C K H F 1 2 3 F D 1. BASE 2. COLLECTOR 3. EMITTER MIN NOR MAX A 4.45 C 1.4 1.5 1.6 F 1.4 1.5 1.6 H 1.5 1.55 1.6 J 0.9 1.05 1.2 K 0.4 0.5 0.65 MILLIMETERS DIM 4 50 4.65 D 0.3 0.45 0.6 B 2.35 2.5 2.65 E 3.95 4.10 4.25 G 0.35 0.4 0.45 * Audio Frequncy POWER AMPLIFIER * High Speed Switching Time : tstg=1.0us(Typ.) * HIGH CURRENT APPLICATION |
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