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MRF237 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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MRF237 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 18 V BVCES IC = 5.0 mA 36 V BVEBO IC = 1.0 mA 4.0 V ICBO VCE = 15 V .25 mA hFE VCE = 5.0 V IC = 250 mA 5.0 --- COB VCB = 15 V f = 1.0 MHz 15 20 pF GPE ηηηη VCC = 12.5 V POUT = 4.0 W f = 175 MHz 12 50 14 62 dB % SILICON NPN RF POWER TRANSISTOR MRF237 DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz MAXIMUM RATINGS IC 1.0 A VCBO 36 V VCEO 18 V PDISS 8.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθ JC 22 °C/W PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR |
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