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FTA1015 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTA1015 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() FEATURES TO-92 PNP Transistor MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) s t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 0 5 - e g a t l o V e s a B - r o t c e ll o C VCEO Collector-Emitter Voltage -50 V VEBO V 5 - e g a t l o V e s a B - r e t t i m E IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 600 mW Tj 5 2 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 5 2 1 - 5 5 - e r u t a r e p m e T e g a r o t S ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100 μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 μA Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE= -6V, IC= -2mA 70 400 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -10mA -1.1 V Transition frequency fT VCE= -10 V, IC= -1mA f =30MHz 80 MHz Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHZ 7 pF Noise Figure NF VCE= -6 V, IC= -0.1mA, f =1KHz,RG=10K 6 dB CLASSIFICATION OF hFE Rank R G Y O Range 0 0 4 - 0 0 2 0 4 2 - 0 2 1 0 4 1 - 0 7 SEMICONDUCTOR TECHNICAL DATA FTA1015 2009. 11. 18 1/2 Revision No : 0 TO-92 DIM MILLIMETERS A B C D F G H J L 4.70 MAX 4.80 MAX 3.70 MAX 1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B G H F F E C E 0.51 MAX M + _ 0.55 MAX 1. EMITTER 2. COLLECTOR 3. BASE |
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