FTA1225 datasheet(1/2 Pages) FS

Part #	FTA1225

Description	Power Amplifier Applications Driver Stage Amplifier Applications

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

2011. 12. 26

1/2

SEMICONDUCTOR

TECHNICAL DATA

FTA1225

Revision No : 0

DPAK

DIM

MILLIMETERS

A

B

C

D

F

H

I

J

L

6 50 ± 0 2

5 60 ± 0 2

5 20 ± 0 2

1 50 ± 0 2

2 70 ± 0 2

2 30 ± 0 1

1 00 MAX

2 30 ± 0 2

0 5 ± 0 1

0 50 ± 0 10

E

1 6 ± 0 2

O

A

C

I

J

H

F

L

1

2

3

1 BASE

2 COLLECTOR

3 EMITTER

0 95 MAX

Q

c

m

f r

High transition frequency: fT = 100 MHz (typ.)

Complementary to FTC2983

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

CLASSIFICATION OF hFE

Y

O

K

N

A

R

RANGE

0

4

2

-

0

2

1

0

4

1

-

0

7

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

V

5

-

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

IC

A

5

.

1

-

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

Collector Power Dissipation

1

W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

Storage Temperature

-55~150

℃

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA ,IE=0

-160

V

Collector-emitter breakdown voltage

V (BR)CEO

*

IC=-10mA, IB=0

-160

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=160V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-5V, IC=-0.1A

70

240

Collector-emitter saturation voltage

VCE(sat)

IC=-0.5A,IB=-50mA

-1.5

V

Base-emitter voltage

VBE

VCE=-5V, IC=-0.5A

-1

V

Transition frequency

fT

VCE=-10V ,IC=-100mA

100

MHz

Collector output capacitance

Cob

VCB=-10V ,IE=0,f=1MHz

30

pF

* Pulse test

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