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IPA60R650CE Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IPA60R650CE
Description  Isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IPA60R650CE Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IPA60R650CE Datasheet HTML 1Page - Inchange Semiconductor Company Limited IPA60R650CE Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
Isc N-Channel MOSFET Transistor
IPA60R650CE
·
FEATURES
·
With TO-220F Package
·
Drain Source Voltage-
: VDSS=600V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.65Ω(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
9.9
6.2
A
IDM
Drain Current-Single Pulsed
19
A
PD
Total Dissipation @TC=25℃
28
W
Tj
Max. Operating Junction Temperature
-40~150
℃
Tstg
Storage Temperature
-40~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
4.5
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
80
℃
/W


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