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MB14S Datasheet(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

Part # MB14S
Description  Schottky Surface Mount Flat Bridge Rectifier
PDF  2 Pages
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Manufacturer  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
Direct Link  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

MB14S Datasheet(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

  MB14S Datasheet HTML 1Page - Microdiode Semiconductor (Shenzhen) Co., Ltd MB14S Datasheet HTML 2Page - Microdiode Semiconductor (Shenzhen) Co., Ltd  
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Schottky Surface Mount Flat Bridge Rectifier
DN:T19805A0
https://www.microdiode.com
Rev:2019A0
Page :1
Voltage Range - 40 to 200 V olts Current - 1.0 Ampere
MB14S THRU MB120S
Features
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Mechanical Data
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
High temperature soldering guaranteed: 260°/10 seconds at 5
lbs., (2.3kg) tension
Small size, simple installation
High surge current capability
Case : JEDEC MBS Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
Weight : 0.0035 ounce, 0.1 grams
MBS
Dimensions in inches and (millimeters)
Parameter
SYMBOLS
MB14S
MB16S
MB18S
MB110S
MB120S
UNITS
Marking Code
MDD
MB14S
MDD
MB16S
MDD
MB18S
MDD
MB110S
MDD
MB120S
Maximum repetitive peak reverse voltage
VRRM
40
60
80
100
200
V
Maximum RMS voltage
VRMS
28
42
56
70
140
V
Maximum DC blocking voltage
VDC
40
60
80
100
200
V
Maximum average forward rectified current
IF(AV)
1.0
A
Peak forward surge current,
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Maximum instantaneous forward voltage at 1A
VF
0.55
0.70
0.85
0.90
V
Maximum DC reverse current
TA=25°C
at rated DC blocking voltage
TA=100°C
IR
0.3
10
0.2
5
0.1
2
mA
Typical junction capacitance at 4.0V,1.0MHz
C j
110
80
pF
Typical thermal resistance
RθJA
RθJL
100
20
°C/W
Operating temperature range
TJ
-55 to +150
°C
storage temperature range
TSTG
-55 to +150
°C
NOTE:1.Measured at 1MHz and applied reverse voltage of 4 V D.C.
2.Mounted on glass epoxy P C board with 4 X (5X5mm) copper pad.
+
.193(4.90)
.177(4.50)
.157(4.00)
.142(3.60)
.276(7.0)
MAX
.102(2.60)
.087(2.20)
.033(0.84)
.022(0.56)
.118(3.0)
MAX
.106(2.70)
.090(2.30)
.008(0.20)
MAX
.053(1.53)
.037(0.95)
.083(2.12)
.043(1.10)
.043(1.10)
.028(0.70)
.014(0.35)
.006(0.15)


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