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SL52B Datasheet(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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SL52B Datasheet(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 3 page ![]() LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES DN:T19717A0 https://www.microdiode.com Rev:2019A0 Page :1 Reverse Voltage - 20 to 100 Volts Forward Current - 5.0 Ampere SL52B THRU SL510B Mechanical Data Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260°C/10 seconds at terminals Case : JEDEC DO-214AA/SMB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.003ounce, 0.093 grams Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Dimensions in inches and (millimeters) DO-214AA/SMB 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.44) 0.084(2.13) 0.08 6 (2.20) 0.07 1 (1.80) 0.18 5(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Parameter SYMBOLS SL 52B SL 53B SL 54B SL 55B SL 56B SL 58B SL510B UNITS Marking Code MDD SL 52B MDD SL 53B MDD SL 54B MDD SL 55B MDD SL 56B MDD SL 58B MDD SL 510B Maximum repetitive peak reverse voltage VRMM 20 30 40 50 60 80 100 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 V Maximum average forward rectified current at TL=90℃ I(AV) 5.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 100 A Maximum instantaneous forward voltage at 5.0A VF 0.45 0.50 0.70 V Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 0.5 20.0 0.2 10.0 mA Typical junction capacitance (NOTE 2) CJ 300 pF Typical thermal resistance (NOTE 3) RJA 68.0 ℃/ W Operating junction and storage temperaturerange TJ,TSTG -55to+150 ℃ Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas. 3.The typical data above is for reference only. |
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