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SS52F Datasheet(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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SS52F Datasheet(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 3 page ![]() SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER DN:T19702A0 https://www.microdiode.com Rev:2019A0 Page :1 SS52F THRU SS5200F Dimensions in inches and (millimeters) Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere SMAF 0.193(4.90) 0.173(4.40) 0.047(1.20) 0.031(0.80) 0.008(0.20) 0.005(0.12) 0.047(1.20) 0.035(0.90) 0.146(3.70) 0.130(3.30) 0.063 (1.60) 0.051 (1.30) 0.106(2.70) 0.094(2.40) Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 °C/10 seconds at terminals Mechanical Data Case : JEDEC SMAF molded plastic body Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight : 0.0018 ounce, 0.064 grams Parameter SYMBOLS SS52F SS53F SS54F SS55F SS56F SS58F SS510F SS5150F SS5200F UNITS Marking Code MDD SS52F MDD SS53F MDD SS54F MDD SS55F MDD SS56F MDD SS58F MDD SS510F MDD SS5150F MDD SS5200F Maximum repetitive peak reverse voltage VRMM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current at TL(see fig.1) I(AV) 5.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 150 A Maximum instantaneous forward voltage at 5.0A VF 0.55 0.70 0.85 0.95 V Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 0.5 0.2 mA 20.0 10.0 2.0 Typical junction capacitance (NOTE 1) CJ 200 pF Typical thermal resistance (NOTE 2) RJA 75.0 ℃/ W Operating junction temperature range TJ -55 to +125 ℃ Storage temperature range TSTG -55 to +150 ℃ Note: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas. 3.The typical data above is for reference only. |
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