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MBR830CT Datasheet(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

Part # MBR830CT
Description  SCHOTTKY BARRIER RECTIFIER
PDF  2 Pages
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Manufacturer  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
Direct Link  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

MBR830CT Datasheet(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

  MBR830CT Datasheet HTML 1Page - Microdiode Semiconductor (Shenzhen) Co., Ltd MBR830CT Datasheet HTML 2Page - Microdiode Semiconductor (Shenzhen) Co., Ltd  
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SCHOTTKY BARRIER RECTIFIER
DN:T19823A0
https://www.microdiode.com
Rev:2019A0
Page :1
Reverse Voltage - 20 to 100 Volts Forward Current - 8.0 Ampere
MBR820CT THRU MBR8100CT
Mechanical Data
Features
The plastic package carries Underwriters
Laboratory Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250°C,0.25”(6.35mm) from case for 10 seconds
TO-220AB
Case
: JEDEC TO-220AB Molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity
: Polarity symbol marking on body
Mounting Position
: Any
Weight
: 0.080 ounce, 2.24 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
SYMBOLS
MBR
820CT
MBR
830CT
MBR
840CT
MBR
845CT
MBR
850CT
MBR
860CT
MBR
870CT
MBR
880CT
MBR
890CT
MBR
8100C
UNITS
Marking Code
MDD
MBR
820CT
MDD
MBR
830CT
MDD
MBR
840CT
MDD
MBR
845CT
MDD
MBR
850CT
MDD
MBR
860CT
MDD
MBR
870CT
MDD
MBR
880CT
MDD
MBR
890CT
MD
TD
MBR
8100C
Maximum repetitive peak reverse voltage
VRMM
20
30
40
45
50
60
70
80
90
10T0
V
Maximum RMS voltage
VRMS
14
21
28
32
35
42
49
56
63
70
V
Maximum DC blocking voltage
VDC
20
30
40
45
50
60
70
80
90
100
V
Maximum average forward rectified
current (see fig.1)
I(AV)
8.0
A
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
IFSM
150
A
Maximum instantaneous forward voltage at 8.0A
VF
0.65
0.75
0.85
V
TA=25℃
Maximum DC reverse current
at rated DC blocking voltage
TA=100℃
IR
1.0
A
15.0
50.0
Typical junction capacitance (NOTE 1)
CJ
300.0
250
pF
Typical thermal resistance (NOTE 2)
RθJA
3.0
℃/
W
Operating junction temperature range
TJ
-65 to +125
-65 to +150
℃
storage temperature range
TSTG
-65 to +150
℃
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case
Dimensions in inches and (millimeters)
0.160 (4.05)
0.140 (3.55)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037(0.94)
0.027(0.68)
0.105 (2.67)
0.095 (2.41)
0.635(16.13)
0.625(15.87)
0.113(2.87)
0.103(2.62)
0.154(3.91)
0.148(3.74)
0.415(10.54)
MAX
0.410(10.41)
0.390(9.91)
0.145(3.68)
0.135(3.43)
0.350(8.89)
0.330(8.38)
1.148(29.16)
1.118(28.40)
0.590(14.22)
0.530(13.46)
0.022(0.58)
0.014(0.35)
0.110(2.79)
0.100(2.54)
0.560(14.2)
0.530(13.4)
0.057(1.45)
0.051(1.30)
0.185(4.70)
0.175(4.44)
PIN 1
PIN 3
PIN 2
CASE
111
PIN
DIA


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