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MBR830CT Datasheet(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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MBR830CT Datasheet(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 2 page ![]() SCHOTTKY BARRIER RECTIFIER DN:T19823A0 https://www.microdiode.com Rev:2019A0 Page :1 Reverse Voltage - 20 to 100 Volts Forward Current - 8.0 Ampere MBR820CT THRU MBR8100CT Mechanical Data Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250°C,0.25”(6.35mm) from case for 10 seconds TO-220AB Case : JEDEC TO-220AB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.080 ounce, 2.24 grams Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS MBR 820CT MBR 830CT MBR 840CT MBR 845CT MBR 850CT MBR 860CT MBR 870CT MBR 880CT MBR 890CT MBR 8100C UNITS Marking Code MDD MBR 820CT MDD MBR 830CT MDD MBR 840CT MDD MBR 845CT MDD MBR 850CT MDD MBR 860CT MDD MBR 870CT MDD MBR 880CT MDD MBR 890CT MD TD MBR 8100C Maximum repetitive peak reverse voltage VRMM 20 30 40 45 50 60 70 80 90 10T0 V Maximum RMS voltage VRMS 14 21 28 32 35 42 49 56 63 70 V Maximum DC blocking voltage VDC 20 30 40 45 50 60 70 80 90 100 V Maximum average forward rectified current (see fig.1) I(AV) 8.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 150 A Maximum instantaneous forward voltage at 8.0A VF 0.65 0.75 0.85 V TA=25℃ Maximum DC reverse current at rated DC blocking voltage TA=100℃ IR 1.0 A 15.0 50.0 Typical junction capacitance (NOTE 1) CJ 300.0 250 pF Typical thermal resistance (NOTE 2) RθJA 3.0 ℃/ W Operating junction temperature range TJ -65 to +125 -65 to +150 ℃ storage temperature range TSTG -65 to +150 ℃ Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to case Dimensions in inches and (millimeters) 0.160 (4.05) 0.140 (3.55) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037(0.94) 0.027(0.68) 0.105 (2.67) 0.095 (2.41) 0.635(16.13) 0.625(15.87) 0.113(2.87) 0.103(2.62) 0.154(3.91) 0.148(3.74) 0.415(10.54) MAX 0.410(10.41) 0.390(9.91) 0.145(3.68) 0.135(3.43) 0.350(8.89) 0.330(8.38) 1.148(29.16) 1.118(28.40) 0.590(14.22) 0.530(13.46) 0.022(0.58) 0.014(0.35) 0.110(2.79) 0.100(2.54) 0.560(14.2) 0.530(13.4) 0.057(1.45) 0.051(1.30) 0.185(4.70) 0.175(4.44) PIN 1 PIN 3 PIN 2 CASE 111 PIN DIA |
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