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MBR2020CT Datasheet(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

Part # MBR2020CT
Description  SCHOTTKY BARRIER RECTIFIER
PDF  2 Pages
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Manufacturer  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
Direct Link  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

MBR2020CT Datasheet(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

  MBR2020CT Datasheet HTML 1Page - Microdiode Semiconductor (Shenzhen) Co., Ltd MBR2020CT Datasheet HTML 2Page - Microdiode Semiconductor (Shenzhen) Co., Ltd  
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SCHOTTKY BARRIER RECTIFIER
DN:T19826A0
https://www.microdiode.com
Rev:2019A0
Page :1
Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere
MBR2020CT THRU MBR20100CT
Mechanical Data
Features
The plastic package carries Underwriters
Laboratory Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250°C,0.25”(6.35mm) from case for 10 seconds
TO-220AB
Dimensions in inches and (millimeters)
Case
: JEDEC TO-220AB Molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity
: Polarity symbol marking on body
Mounting Position
: Any
Weight
: 0.080 ounce, 2.24 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
SYMBOLS
MBR
2020CT
MBR
2030CT
MBR
2040CT
MBR
2045CT
MBR
2050CT
MBR
2060CT
MBR
2070CT
MBR
2080CT
MBR
2090CT
MBR
20100CT
UNITS
Marking Code
MDD
MBR
2020CT
MDD
MBR
2030CT
MDD
MBR
2040CT
MDD
MBR
2045CT
MDD
MBR
2050CT
MDD
MBR
2060CT
MDD
MBR
2070CT
MDD
MBR
2080CT
MDD
MBR
2090CT
MDD
MBR
20100CT
Maximum repetitive peak reverse voltage
VRMM
20
30
40
45
50
60
70
80
90
100
V
Maximum RMS voltage
VRMS
14
21
28
32
35
42
49
56
63
70
V
Maximum DC blocking voltage
VDC
20
30
40
45
50
60
70
80
90
100
V
Maximum average forward
rectified current (see fig.1)
I(AV)
20.0
A
Peak forward surge
current 8.3ms single half
sine-wave
IFSM
150
A
Maximum instantaneous forward voltage at
10.0A
VF
0.55
0.75
0.85
V
TA=25℃
Maximum DC reverse current
at rated DC blocking voltage
TA=100℃
IR
1.0
mA
15.0
50.0
Typical junction capacitance (NOTE 1)
CJ
550
450
pF
Typical thermal resistance (NOTE 2)
RθJC
2.0
℃
/W
Operating junction temperature range
TJ
-65 to +125
-65 to +150
℃
storage temperature range
TSTG
-65 to +150
℃
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case.
0.160 (4.05)
0.140 (3.55)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037(0.94)
0.027(0.68)
0.105 (2.67)
0.095 (2.41)
0.635(16.13)
0.625(15.87)
0.113(2.87)
0.103(2.62)
0.154(3.91)
0.148(3.74)
0.415(10.54)
MAX
0.410(10.41)
0.390(9.91)
0.145(3.68)
0.135(3.43)
0.350(8.89)
0.330(8.38)
1.148(29.16)
1.118(28.40)
0.590(14.22)
0.530(13.46)
0.022(0.58)
0.014(0.35)
0.110(2.79)
0.100(2.54)
0.560(14.2)
0.530(13.4)
0.057(1.45)
0.051(1.30)
0.185(4.70)
0.175(4.44)
PIN 1
PIN 3
PIN 2
CASE
1
1
1
PIN
DIA


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