FTA1576ART1G datasheet(1/4 Pages) FS

Part #	FTA1576ART1G

Description	General Purpose Transistors PNP Silicon

PDF	4 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbo

Value

Unit

Collector–Emitter Voltage

VCEO

–50

V

Collector–Base Voltage

VCBO

–60

V

Emitter–Base Voltage

VEBO

–6.0

V

Collector Current — Continuous

I C

–150

mAdc

Collector power dissipation

PC

0.2

W

Junction temperature

Tj

150

C

Storage temperature

Tstg

-55 ~ +150

C

DEVICE MARKING

FTA1576AQT1G =FQ FTA1576ART1G=FR FTA1576AST1G =FS

ELECTRICAL CHARACTERISTICS (T

A = 25 C unless otherwise noted.)

x

a

M

p

y

T

n

i

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Unit

Collector–Emitter Breakdown Voltage

V (BR)CEO

– 50

—

V

(IC = –1 mA)

Emitter–Base Breakdown Voltage

V (BR)EBO

– 6

—

V

(IE = – 50 µA)

Collector–Base Breakdown Voltage

V (BR)CBO

– 60

—

V

(IC = – 50 µA)

Collector Cutoff Current

I CBO

—

– 0.1

µA

(VCB = – 60 V)

Emitter cutoff current

I EBO

—

– 0.1

µA

(VEB = – 6 V)

Collector-emitter saturation voltage

V CE(sat)

—

-0.5

V

(IC/ IB = – 50 mA / – 5m A)

h

o

i

t

a

r

e

f

s

n

a

r

t

n

e

r

u

c

C

D

FE

120

––

560

––

(V CE = – 6 V, I C= –1mA)

Transition frequency

f T

—

140

––

MHz

(V CE = – 12 V, I E= 2mA, f=30MHz )

Output capacitance

C ob

—

4.0

5.0

pF

(V CB = – 12 V, I E= 0A, f =1MHz )

h FE values are classified as follows:

Q

R

S

hFE

120~270

180~390

270~560

1

3

2

SC-70 / SOT– 323

2

EMITTER

3

COLLECTOR

1

BASE

*

ORDERING INFORMATION

Device

Package

Shipping

FTA1576AXLT1G

3000/Tape & Reel

SC-70 / SOT-323

10000/Tape & Reel

FTA1576AXLT3G

* X : hFE Cassified

2008. 3. 20

1/4

SEMICONDUCTOR

TECHNICAL DATA

FTA1576

Revision No : 0

SC-70 / SOT-323

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