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FTB1386 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTB1386 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page  SEMICONDUCTOR TECHNICAL DATA FTB1386 2012. 01. 13 1/3 Revision No : 0 FTB1386 FEATURES Excellent DC current gain characteristics Complements the FTD2098 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ℃ ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Low collector saturation voltage Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC ContinuousCollector Current -5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ICP* Pulsed Collector Current -10 A Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50 μA,IE 0 3 - 0 = V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB 0 2 - 0 = V Emitter-base breakdown voltage V(BR)EBO IE=-50 μA,IC 6 - 0 = V Collector cut-off current ICBO VCB=-20V,IE 0 = -0.5 μA Emitter cut-off current IEBO VEB=-5V,IC 0 = -0.5 μA DC current gain hFE VCE=-2V,IC=-500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-4A,IB A m 0 0 1 - = -1 V Transition frequency fT VCE=-6V,IC=-50mA,f=30MHz 120 MHz Collector output capacitance Cob VCB=-20V,IE=0,f=1MHz 60 pF CLASSIFIC ATION OF hFE Rank R Q P Range 0 9 3 - 0 8 1 0 7 2 - 0 2 1 0 8 1 - 2 8 Marking R H B Q H B P H B *Single pulse,Pw=10ms SOT-89 DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.7 MAX 0.7 MIN 0.5+0.15/-0.10 C J G D A C K F MILLIMETERS H F 1 2 3 F D + _ + _ 1. BASE 2. COLLECTOR 3. EMITTER |
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