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FTC1704S Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part # FTC1704S
Description  TRANSISTOR (NPN)
PDF  1 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTC1704S Datasheet(HTML) 1 Page - First Silicon Co., Ltd

  FTC1704S Datasheet HTML 1Page - First Silicon Co., Ltd  
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2011.11. 11
1/1
SEMICONDUCTOR
TECHNICAL D ATA
FTC1704S
Revision No : 0
FTC1740S TRANSISTOR (NPN)
FEATURES
Low Cob
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current –Continuous
150
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50
μA , IE
V
0
6
0
=
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB
V
0
5
0
=
Emitter-base breakdown voltage
V(BR)EBO
IE=50
μA, IC
V
7
0
=
Collector cut-off current
ICBO
VCB=60V, IE
1
.
0
0
=
μA
Emitter cut-off current
IEBO
VEB=7V, IC
1
.
0
0
=
μA
DC current gain
hFE
VCE=6V, IC
0
6
5
0
2
1
A
m
1
=
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB
V
4
.
0
A
m
5
=
Transition frequency
fT
VCE=12V, IC=-2mA,f=100MHz
100
MHz
Collector output capacitance
Cob
VCB=12V,IE=0,f=1MHz
2
3.5
pF
CLASSIFICATION OF
hFE
Rank
S
R
Q
Range
0
6
5
-
0
7
2
0
9
3
-
0
8
1
0
7
2
-
0
2
1
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE


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