2013. 08. 04

1/3

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTC3837

High-Frequency Amplifier Transistor

Features

2.Small rbb`Cc and high gain.(Typ.6ps)

3.Small NF.

Parameter

Symbol

Value

Unit

V

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

CBO

30

V

Collector-Emitter Voltage

18

V

V

e

g

a

t

l

o

v

e

s

a

b

-

r

e

t

t

i

m

E

EBO

3

V

I

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

C

C

50

mA

Collector power dissipation

0.2

W

T

e

r

u

t

a

r

e

p

m

e

t

n

o

i

t

c

n

u

J

j

150

°C

T

e

r

u

t

a

r

e

p

m

e

t

e

g

a

r

o

t

S

stg

-55~+150

°C

p

y

T

.

n

i

M

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Max.

Unit

Conditions

Collector-base breakdown voltage

BV

CBO

30

-

-

V

I

Collector-emitter breakdown voltage

BV

CEO

18

-

-

V

I

Emitter-base breakdown voltage

BV

EBO

3

-

-

V

I

Collector cutoff current

I

CBO

-

-

0.5

µA

V

Emitter cutoff current

I

EBO

-

-

0.5

µA

V

Collector-emitter saturation voltage

V

CE(sat)

-

-

0.5

V

I

DC current transfer ratio

h

FE

56

-

180

-

V

Transition frequency

f

T

600

1500

-

MHz

V

Output capacitance

Cob

-

0.9

1.5

pF

V

Collector-base time constant

rbb`Cc

-

6

13

ps

V

F

N

r

o

t

c

a

f

e

s

i

o

N

-

4.5

-

dB

V

Ω

DEVICE MARKING

FTC3837=AP

1

BASE

2

EMITTER

COLLECTOR

3

4.

ORDERING INFORMATION

Device

Package

Shipping

FTC3837

3000/Tape & Reel

SOT-23

We declare that the material of product compliance with RoHS requirements.

SO

3

2

–

T

1

3

2