GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TPR 700
700 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 700 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input returns for fast rise time. Low thermal resistance
package reduces junction temperature, extends life.
CASE OUTLINE
55KT, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
2050 Watts
o2
Maximum Voltage and Current
BVces
Collector to Base Voltage
65 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
55 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
t
r
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Rise Time
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 50 Volts
PW = 10
µsec
DF = 1%
F = 1090 MHz
700
6.7
43
150
70
30:1
Watts
Watts
dB
%
ns
BVebo
3
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 50mA
Ic = 100mA
Ic = 1000mA, Vce = 5 V
3.5
65
10
0.08
Volts
Volts
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
Issue February 1996
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