IXFT15N100Q datasheet(1/2 Pages) IXYS

Part #	IXFT15N100Q

Description	HiPerFET Power MOSFETs Q-Class

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

1000

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C15

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

60

A

I

AR

T

C

= 25

°C15

A

E

AR

T

C

= 25

°C45

mJ

E

AS

T

C

= 25

°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

360

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

TO-247

1.13/10 Nm/lb.in.

TO-264

0.9/6 Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

TO-264

10

g

HiPerFETTM

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated,

Low Q

g, High dv/dt

Features

IXYS advanced low

Q

g process

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Low R

DS (on) low Q

g

Avalanche energy and current rated

Fast intrinsic rectifier

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

1000

V

GS(th)

V

DS

= V

GS, ID = 4 mA

3.0

5.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±200

nA

I

DSS

V

DS

= V

DSS

T

J = 25°C50

µA

V

GS

= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

0.7

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

G = Gate

S = Source

TAB = Drain

98627A (9/01)

TO-247 AD (IXFH)

(TAB)

TO-268 (D3) ( IXFT)

G

S

TO-264 AA (IXFK)

S

G

D

D (TAB)

IXFH 15N100Q

IXFK 15N100Q

IXFT 15N100Q

V

DSS

= 1000 V

I

D25

=

15 A

R

DS(on)

=

0.7

Ω

t

rr ≤

≤≤≤≤ 250 ns

Preliminary data sheet

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