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2SC4880 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 2SC4880
Description  Silicon NPN Triple Diffused
PDF  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4880 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SC4880
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
1700
V
Collector to emitter voltage
V
CEO
900
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
12
A
Collector surge current
I
C(surge)
20
A
Collector power dissipation
P
C*
1
100
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
900
—
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CES
—
—
500
µA
V
CE = 1700 V, RBE = 0
DC current transfer ratio
h
FE
——35
V
CE = 5 V, IC = 1 A
Collector to emitter saturation
voltage
V
CE(sat)
——5
V
I
C = 10 A, IB = 2.5 A
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C = 10 A, IB = 2.5 A
Fall time
t
f
—
—
0.5
µs
I
CP = 8 A, IB1 = 1.4 A
I
B2 ≅ –2.5 A, fH = 31.5 kHz



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