MMZ09312B datasheet(14/28 Pages) NXP

14 / 28 page

RF Device Data

Freescale Semiconductor, Inc.

MMZ09312BT1

TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 3.3 V

360

120

Figure 25. ACPR versus Collector Current

versus Output Power versus Temperature

Pout, OUTPUT POWER (dBm)

--6

--12

--48

--30

--18

--42

160

200

240

280

320

--36

--54

400

--24

--40C

25C

85C

--40C

25C

85C

ACPR

Figure 26. Power Gain versus Power Added

Efficiency versus Output Power versus Temperature

Pout, OUTPUT POWER (dBm)

--40C

25C

85C

--40C

25C

85C

Gain

PAE

Figure 27. P1dB versus Frequency versus

Temperature, CW

f, FREQUENCY (MHz)

700

760

--40C

25C

85C

820

880

1000

940

ICC

VCC1 =VCC2 =VBIAS =3.3 Vdc

--60

VCC1 =VCC2 =VBIAS =3.3 Vdc,f=900 MHz

Single--Carrier IS--95, 9 Channel Forward

750 kHz Measurement Offset

30 kHz Measurement Bandwidth

Figure 28. Power Detector versus Output Power

versus Temperature

Pout, OUTPUT POWER (dBm)

2.7

2.4

2.1

0.3

1.2

1.8

0.6

0.9

1.5

25C

85C

--40C

VCC1 =VCC2 =VBIAS =3.3 Vdc,f=900 MHz

Single--Carrier IS--95, 9 Channel Forward

750 kHz Measurement Offset

30 kHz Measurement Bandwidth

VCC1 =VCC2 =VBIAS =3.3 Vdc,f=900 MHz

Single--Carrier IS--95, 9 Channel Forward

750 kHz Measurement Offset

30 kHz Measurement Bandwidth

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