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F830WB Datasheet(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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F830WB Datasheet(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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2 / 12 page  Jiangsu Donghai Semiconductor Technology CO.,LTD. Rev. 1.0 Page 2 of 12 830WB/F830WB/I830WB/ E830WB/B830WB/D830WB 4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted) Parameter Symbol Test Condition Value Units Min Typ Max Off Characteristics Drain-to-Source Breakdown Voltage BVDSS ID=250μA,VGS=0V 500 -- -- V Drain-to-Source Leakage Current IDSS VDS=500V,VGS=0V,TC=25℃ -- -- 1 μA VDS=400V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Leakage Current IGSS VGS=±30V -- -- ±10 μA On Characteristics Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.0 -- 4.0 V Drain-to-Source on-state Resistance RDS(on) VGS=10V,ID=2.5A -- 1.35 1.5 Ω Forward Transfer Conductance gfs VDS=15V,ID=2.5A 2.4 -- -- S Dynamic Characteristics Input Capacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 560 -- pF Output Capacitance Coss -- 45 -- Reverse Transfer Capacitance Crss -- 17 -- Switching Characteristics Turn-on Delay Time td(on) ID=5A, VDD=250V, RG=25Ω -- 14 -- nS Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 30 -- Turn-off Fall Time tf -- 11 -- Total Gate Charge Qg ID=5A,VDD=400V,VGS=10V -- 12.8 -- nC Gate-to-Source Charge Qgs -- 3.2 -- Gate-to-Drain(“Miller”) Charge Qgd -- 4.8 -- Drain-Source Diode Characteristics Diode Forward Voltage(3) VFSD VGS=0V,IS=5A -- -- 1.4 V Diode Forward Current IS -- -- 5 A Reverse Recovery Time(3) trr TJ=25℃,IF=5A, dIF/dt=100A/μS,VGS=0V -- 320 -- nS Reverse Recovery Charge(3) Qrr -- 1500 -- nC Notes： 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: L=24mH,ID=5A,VDD=50V,VGATE=500V,Start TJ=25℃. 5. ISD=5.0A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃. |
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