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ISCPL185D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCPL185D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor ISCPL185D · FEATURES · Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -15A) · Advanced trench process technology · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Inverters · DC / DC converter · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 120 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.25 ℃ /W |
Similar Part No. - ISCPL185D |
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Similar Description - ISCPL185D |
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