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2SC2714 Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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2SC2714 Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1 / 2 page ![]() Silicon Epitaxial Planar Transistor 2SC2714 FEATURES Small reverse transfer capacitance: Cre=0.7pF(Typ.) Low noise Figure:NF=2.5dB(Typ.) f=100MHz APPLICATIONS High frequency amplifier applications SOT-23 FM,RF,MIX,IF Amplifier applications ORDERING INFORMATION Type No. Marking Package Code 2SC2714 QR/QO/QY SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA IB Base current 4 mA PC Collector Dissipation 100 mW Tj,Tstg Junction and Storage Temperature -55 to+125 ℃ ht t p : // www.lgesemi.com mail:lge@lgesemi.com Revision:201 70701-P1 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=18V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA 40 200 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.3 V Transition frequency fT VCE=6V, IC= 1mA 550 MHz Output capacitance Cob VCB=6V, IE=0,f=1MHz 0.7 pF Noise Figure NF VCE=6V,IE=-1mA,f=100MHz 2.5 5 dB CLASSIFICATION OF hFE(1) Rank R O Y Range 40-80 70-140 100-200 Marking QR QO QY SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G |
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