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2SC5345 Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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2SC5345 Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1 / 2 page ![]() Silicon Epitaxial Planar Transistor 2SC5345 FEATURES High current transition frequency Low output capacitance:Cob=1.4pF Low base time constant and high gain Excellent noise response APPLICATIONS SOT-23 General small signal amplifier ORDERING INFORMATION Type No. Marking Package Code 2SC5345 5345 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 4 V Collector cut-off current ICBO VCB=30V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA 40 240 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.3 V Transition frequency fT VCE=6V, IE=-1mA 550 MHz Output capacitance Cob VCB=6V, IE=0,f=1MHz 1.4 pF CLASSIFICATION OF hFE Rank R O Y Range 40-80 70-140 120-240 Marking 5345 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G ht t p : // www.lgesemi.com mail:lge@lgesemi.com Revision:201 70701-P1 |
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