A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

45

V

20

V

3.5

V

1.0

mA

20

120

ηηηη

f = 1025 to 1150 MHz

PULSE WIDTH

= 10

µS

DUTY CYCLE

= 1.0%

10

4.0

35

dB

W

%

NPN SILICON RF MICROWAVE TRANSISTOR

MSC80917

DESCRIPTION:

The

Class-C, Common Base Device

Designed for IFF, DME driver

Applications.

FEATURES INCLUDE:

• Omnigold™ Metalization System

• P

• G

MAXIMUM RATINGS

1.0 A

37 V

-65 °C to +200 °C

-65 °C to +150 °C

θθθθ

JC

35 °C/W

PACKAGE STYLE .280 2L FL (B)

1 = COLLECTOR

2 = BASE

3 = EMITTER

1

2

3