VBA3102M datasheet(2/8 Pages) VBSEMI

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Symbol

Min

Typ

Max

Units

BVDSS

100

VDS=80V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

ID(ON)

187

TJ=125°C

93.0

gFS

VSD

0.77

2.5

ISM

Ciss

510

640

770

Coss

Crss

0.9

1.8

2.7

Ω

Qg(10V)

Qg(4.5V)

5.5

Qgs

Qgd

0.7

1.2

1.7

tD(on)

7.2

2.2

tD(off)

trr

Qrr

Body Diode Reverse Recovery Charge IF=2.5A, dI/dt=300A/µs

Pulsed Body-diode Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=40V, RL=8Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=40V, ID=2.5A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

SWITCHING PARAMETERS

Ω

IS=1A,VGS=0V

VDS=5V, ID=2.5A

Forward Transconductance

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

VDS=VGS ID=250µA

VDS=0V, VGS= ±30V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Maximum Body-Diode Continuous Current

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=2.5A

Reverse Transfer Capacitance

IF=2.5A, dI/dt=300A/µs

VGS=0V, VDS=40V, f=1MHz

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2 FR-4 board with

VBA3102M

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