VBK2298 datasheet(2/9 Pages) VBSEMI

2 / 9 page

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 360 °C/W.

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

10 s

RthJA

250

300

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

225

270

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 14

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

2.4

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.45

- 1.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS  - 5 V, VGS = - 4.5 V

- 2

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 1.4 A

0.080



VGS = - 2.5 V, ID = - 1.2 A

0.120

VGS = - 1.8 V, ID = - 0.3 A

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 1.4 A

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

272

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = - 10 V, VGS = - 4.5 V, ID = - 1.4 A

4.3

6.5

VDS = - 10 V, VGS = - 2.5 V, ID = - 1.4 A

2.7

4.1

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

1.0

Gate Resistance

f = 1 MHz

1.4



Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 9.1 

ID  - 1.1 A, VGEN = - 4.5 V, Rg = 1 

Rise Time

Turn-Off DelayTime

td(off)

Fall Time

918

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 9.1 

ID  - 1.1 A, VGEN = - 8 V, Rg = 1 

510

Rise Time

Turn-Off DelayTime

td(off)

Fall Time

714

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

2.4

Pulse Diode Forward Currenta

ISM

- 6

Body Diode Voltage

VSD

IF = - 0.7 A

- 0.8

- 1.2

Body Diode Reverse Recovery Time

trr

IF = - 0.7 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

714

Reverse Recovery Fall Time

Reverse Recovery Rise Time

VBK2298

www.VBsemi.com

0.140

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