Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

Nch + Pch MOSFET

•

ON-resistance Nch : RDS(on)1=34mΩ(typ.)

Pch : RDS(on)1=65mΩ(typ.)

•

1.8V drive

•

Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

N-channel

P-channel

Unit

Drain-to-Source Voltage

VDSS

20

--20

V

Gate-to-Source Voltage

VGSS

±10

±10

V

Drain Current (DC)

ID

4

--3

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

20

--20

A

Allowable Power Dissipation

PD

1.0

W

Total Dissipation

PT

1.2

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

This product is designed to “ESD immunity < 200V

*”, so please take care when handling.

* Machine Model

Package Dimensions

unit : mm (typ)

7045-002

Product & Package Information

• Package

: EMH8

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

Electrical Connection

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

EMH8

1

4

85

0.125

0.5

2.0

0.2

876

5

123

4

TL

EMH2604-TL-H

N- and P-Channel

V(D-S) MOSFET

VBKB5245

www.VBsemi.com

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