VBMB15R13 datasheet(1/9 Pages) VBSEMI

Part #	VBMB15R13

Description	N-Channel 500V (D-S)Power MOSFET

PDF	9 Pages

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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1

FEATURES

• Lower Gate Charge Qg Results in Simpler Drive

Reqirements

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supplies

• High Speed Power Switching

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 5.7 mH, Rg = 25 , IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).

c. ISD  14 A, dI/dt  250 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V)

500

RDS(on) ()VGS = 10 V

0.660

Qg (Max.) (nC)

75

Qgs (nC)

18

Qgd (nC)

34

Configuration

Single

N-Channel MOSFET

G

D

S

Available

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

13

A

TC = 100 °C

8.1

Pulsed Drain Currenta

IDM

50

Linear Derating Factor

2.0

W/°C

Single Pulse Avalanche Energyb

EAS

560

mJ

Avalanche Currenta

IAR

13

A

Repetitive Avalanche Energya

EAR

25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

240

W

Peak Diode Recovery dV/dtc

dV/dt

9.2

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

www.VBsemi.com

VBMB15R13

G D S

TO-220 FULLPAK

N-Channel 500V (D-S) Power MOSFET

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