VBMB16R08 datasheet(2/9 Pages) VBSEMI

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. Coss effective is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

-0.75

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

600

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

660

mV/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 5.5 A b

0.880



Forward Transconductance

gfs

VDS = 50 V, ID = 5.5 A

5.5

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1400

Output Capacitance

Coss

180

Reverse Transfer Capacitance

Crss

-7.1

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

1957

VDS = 480 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VDS = 0 V to 480 V

Total Gate Charge

VGS = 10 V

ID = 8.0A, V DS = 400 V

see fig. 6 and 13 b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 8.0 A

Rg = 9.1 , RD = 35.5 , see fig. 10 b

-13

Rise Time

-25

Turn-Off Delay Time

td(off)

-30

Fall Time

-22

Gate Input Resistance

f = 1 MHz, open drain

0.5

3.2



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the



integral reverse



p - n junction diode

9.2

Pulsed Diode Forward Current a

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 8.0 A, VGS = 0 V b

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b

530

800

Body Diode Reverse Recovery Charge

Qrr

-3.0

4.4

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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VBMB16R08

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