11

Single Ended

GP

5.5

0.40

12.5

3.90 C/W

125

1.0

65

40

180

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Power Gain

Drain Efficiency

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

Storage

Temperature

Drain to

Source

Voltage

Gate to

Source

Voltage

-65 C to 150 C

C

V

Load Mismatch Tolerance

VSWR

Relative

0.15

7.00

Ids =

mA, Vgs = -8V

V,

Vgs = -8V

Ciss

Crss

Coss

Vds =

Idq =

A, Vds =

V, F =

0.15

Bvdss

Idss

Drain Breakdown Voltage

V

mA

pF

pF

pF

Common Source Output Capacitance

Common Source Feedback Capacitance

Idq =

Idq = 0.15

2,000

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com

2,000

2,000

Common Source Input Capacitance

V

Vgs

Zero Bias Drain Current

Gate Bias for Drain Current

V

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

TEST CONDITIONS

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

RF CHARACTERISTICS (

35.0

ABSOLUTE MAXIMUM RATINGS ( T =

Gps

48.0

A, Vds =

V, F =

A, Vds =

V, F =

48.0

48.0

Watts

MHz

MHz

MHz

Watts

Package Style

35.0

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

General Description

48.0

Vds =

Vds = 48.0 V, Ids =

η

dB

%

o

o

o

o

o

RF POWER GAN TRANSISTOR

Vgs =-8V, F = 1 MHz

48.0

Vds =

Vgs =-8V, F = 1 MHz

48.0

Vds =

Vgs =-8V, F = 1 MHz

48.0

REVISION 04/14/2011

2

25 C )

WATTS OUTPUT )

200

polyfet rf devices

GP141

10:1

ROHS COMPLIANT

V

-10

to +

-3.2

Polyfet's GAN (on SiC) HEMT

power transistors contain no

internal matching; making them

suitable for both broadband and

narrow band applications.

The use of a thermally enhanced

package enables this device to

have superior heat dissipation

properties. The high drain break

down voltage permits this device

to operate over a wide voltage

range of up to 50V.

0.15 A