MPC5748C datasheet(21/76 Pages) PHILIPS

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Table 12. STANDBY Current consumption characteristics

Symbol

Parameter

Conditions1

Min

Typ

Max

Unit

STANDBY0

STANDBY with

8K RAM

Ta = 25 °C

—

µA

Ta = 85 °C

—

175

800

Ta = 105 °C

—

338

1725

Ta = 125 °C

—

750

2775

STANDBY1

STANDBY with

64K RAM

Ta = 25 °C

—

µA

Ta = 85 °C

—

176

815

Ta = 105 °C

—

350

1775

Ta = 125 °C

—

825

3000

STANDBY2

STANDBY with

128K RAM

Ta = 25 °C

—

µA

Ta = 85 °C

—

182

830

Ta = 105 °C

—

366

1825

Ta = 125 °C

—

900

3250

STANDBY3

STANDBY with

256K RAM

Ta = 25 °C

—

µA

Ta = 85 °C

—

197

860

Ta = 105 °C

—

400

1875

Ta = 125 °C

—

975

3500

STANDBY3

FIRC ON

Ta = 25 °C

—

500

—

µA

1. The content of the Conditions column identifies the components that draw the specific current.

NOTE

For the Precision channel Analog inputs, SIUL2_MSCRn[PUS]

must be configured to 0 before entering STANDBY. An

increase in current would be observed when

SIUL2_MSCRn[PUS] is configured to be 1, irrespective of the

state of IBE or PUE. The current numbers would increase

irrespective of whether the pad is pulled low/high externally.

4.6 Electrostatic discharge (ESD) characteristics

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n + 1) supply pin). This

test conforms to the AEC-Q100-002/-003/-011 standard.

NOTE

A device will be defined as a failure if after exposure to ESD

pulses the device no longer meets the device specification

requirements. Complete DC parametric and functional testing

shall be performed per applicable device specification at room

General

MPC5748G Microcontroller Data Sheet, Rev. 6, 11/2018

NXP Semiconductors

MPC5748C Datasheet(PDF) 21 Page - NXP Semiconductors

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