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IRF540ZPBF Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # IRF540ZPBF
Description  N-Channel 100-V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

IRF540ZPBF Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 100-V (D-S) MOSFET
FEATURES
•
TrenchFET® Power MOSFET
•
175 °C Junction Temperature
•
Low Thermal Resistance Package
•
100 % Rg Tested
APPLICATIONS
•
Isolated DC/DC Converters
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)ID (A)
100
0.0
18 at VGS = 10 V
70a
N-Channel MOSFET
G
D
S
Notes:
a. Package limited.
b. Duty cycle
≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
a
A
TC = 125 °C
3
5a
Pulsed Drain Current
IDM
1
45
Avalanche Current
L = 0.1 mH
IAS
3
1
Single Pulse Avalanche Energyb
EAS
6
0
mJ
Maximum Power Dissipationb
TC = 25 °C
PD
3
55c
W
TA = 25 °C
d
3.
35
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount
RthJA
40
°C/W
Junction-to-Case (Drain)
RthJC
0.4
RoHS
COMPLIANT
TO-220AB
Top View
GD S
7
0
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
IRF540ZPBF
1


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