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IRF7410 Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7410
Description  HEXFET Power MOSFET
PDF  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7410 Datasheet(HTML) 2 Page - International Rectifier

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IRF7410
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
97
145
ns
TJ = 25°C, IF = -2.5A
Qrr
Reverse Recovery Charge
–––
134
201
µC
di/dt = -100A/µs
‚
Source-Drain Ratings and Characteristics
A
-65
–––
–––
–––
-2.5
–––
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12
–––
–––
VVGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.006 –––
V/°C
Reference to 25°C, ID = -1mA
–––
–––
7VGS = -4.5V, ID = -16A
‚
–––
–––
9VGS = -2.5V, ID = -13.6A
‚
–––
–––
13
VGS = -1.8V, ID = -11.5A
‚
VGS(th)
Gate Threshold Voltage
-0.4
–––
-0.9
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
55
–––
–––
SVDS = -10V, ID = -16A
–––
–––
-1.0
VDS = -9.6V, VGS = 0V
–––
–––
-25
VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -8V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 8V
Qg
Total Gate Charge
–––
91
–––
ID = -16A
Qgs
Gate-to-Source Charge
–––
18
–––
nC
VDS = -9.6V
Qgd
Gate-to-Drain ("Miller") Charge
–––
25
–––
VGS = -4.5V
‚
td(on)
Turn-On Delay Time
–––
13
20
VDD = -6V, VGS = -4.5V
tr
Rise Time
–––
12
18
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
271
407
RD = 6Ω
tf
Fall Time
–––
200
300
RG = 6Ω
‚
Ciss
Input Capacitance
––– 8676 –––
VGS = 0V
Coss
Output Capacitance
––– 2344 –––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
––– 1604 –––
ƒ = 1.0MHz
IGSS
µA
m
Ω
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns



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