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BSP122 Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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BSP122 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 8 page ![]() Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 91193_07 101 100 10-1 25 °C 150 °C 0.4 0.8 1.6 1.2 2.0 V GS = 0 V VSD, Source-to-Drain Voltage (V) 91193_08 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) T C = 25 °C T J = 150 °C Single Pulse 102 2 5 2 5 2 5 VDS, Drain-to-Source Voltage (V) 10 102 25 2 5 0.1 1 10 1 25 103 91193_09 TC, Case Temperature (°C) 25 150 125 100 75 50 0.0 0.4 0.6 0.8 1.0 0.2 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R g D.U.T. 10 V + - V DS V DD V DS 90 % 10 % V GS t d(on) t r t d(off) t f 91193_11 t1, Rectangular Pulse Duration (S) 10-5 10-4 10-3 10-2 0.1 1 10 102 103 1 0.1 10-2 102 10 0 - 0.5 0.2 0.1 0.05 0.01 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t 1/t2 2. Peak T j = PDM x ZthJC + TC 0.02 P DM t 1 t 2 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw BSP122 4 |
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