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CSD18534KCS Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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CSD18534KCS Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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3 / 7 page ![]() TYPICAL CHARACTERISTICS (25 °C unless noted) Output Characteristics Transconductance Capacitance 0 20 40 60 80 100 0 2468 10 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 7 V 3V, 4V 6 V 0 20 40 60 80 100 120 0 10203040 50 TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 102030 4050 60 VDS - Drain-to-Source Voltage (V) Crss Ciss Coss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 100 0 VGS - Gate-to-Source Voltage (V) 25 °C - 55 °C TC = 125 °C 0.000 0.003 0.006 0.009 0.012 0.015 0 20406080 100 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 10203040 50 Qg - Total Gate Charge (nC) VDS = 30 V ID = 50 A 1.5 4.5 7.5 3.0 6.0 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CSD18534KCS 3 |
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