SI7439DP datasheet(2/5 Pages) VISHAY

2 / 5 page

Si7439DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 73106

S-41526—Rev. A, 16-Aug-04

Surface Mounted on 1” x 1” FR4 Board.

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−2.0

−4.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = −150 V, VGS = 0 V

−1

Zero Gate Voltage Drain Current

IDSS

VDS = −150 V, VGS = 0 V, TJ = 70_C

−10

On-State Drain Currenta

ID(on)

VDS = −10 V, VGS = −10 V

−30

Drain Source On State Resistancea

rDS( )

VGS = −10 V, ID = −5.2 A

0.073

0.090

Drain-Source On-State Resistancea

rDS(on)

VGS = −6 V, ID = −5.0 A

0.077

0.095

Forward Transconductancea

gfs

VDS = −15 V, ID = −5.2 A

Diode Forward Voltagea

VSD

IS = −4.2 A, VGS = 0 V

−0.78

−1.2

Dynamicb

Total Gate Charge

135

Gate-Source Charge

Qgs

VDS = −75 V, VGS = −10 V, ID = −5.2 A

17.5

Gate-Drain Charge

Qgd

26.5

Gate Resistance

1.5

4.5

Turn-On Delay Time

td(on)

Rise Time

VDD = −75 V, RL = 15.5 W

Turn-Off Delay Time

td(off)

VDD = −75 V, RL = 15.5 W

ID ^ −4.8 A, VGEN = −10 V, Rg = 6 W

115

180

Fall Time

100

Source-Drain Reverse Recovery Time

trr

IF = −2.9 A, di/dt = 100 A/ms

100

150

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

2468

VGS = 10 thru 5 V

25_C

TC = 125_C

−55_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

4 V

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