UT2302G-AE3-R datasheet(4/9 Pages) VBSEMI

Part #	UT2302G-AE3-R

Description	N-Channel 20 V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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4 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0

0.3

0.6

0.9

1.2

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

0.1

0.3

0.5

0.7

0.9

- 50

- 25

100

125

150

ID = 250 μA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.02

0.03

0.04

0.05

0.06

024

TJ =25 °C

ID =5A

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

0.001

0.01

0.1

100

Time (s)

Safe Operating Area, Junction-to-Ambient

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

100 ms

Limited by RDS(on)*

BVDSS Limited

1ms

100 μs

10 ms

1s,10s

VDS - Drain-to-Source Voltage (V)

*V GS > minimum VGS at which RDS(on) is specified

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UT2302G-AE3-R

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