Switching Diode

MCL4448

Silicon epitaxial planar type

Features

Low power loss, high efficiency

High reliability

Mechanical data

Case : Glass, Micro-MELF

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Indicated by cathode band

Mounting Position : Any

Weight : 0.05 gram

PARAMETER

CONDITIONS

Symbol

MIN.

TYP.

MAX.

UNIT

Non-Repetitive peak reverse voltage

100

V

Reverse voltage

75

V

Peak forward surge current

0.5

A

Repetitive peak forward voltage

500

mA

Forward current

300

mA

Average forward current

150

mA

Power dissipation

500

mW

Junction temperature

125

Storage temperature

-55

+125

Formosa MS

PARAMETER

CONDITIONS

Symbol

MIN.

TYP.

MAX.

UNIT

0.62

0.72

V

0.86

1.00

V

25

nA

50

uA

5.0

uA

Breakdown current

100

V

Diode capacitance

4.0

pF

Rectification efficiency

45

%

8

ns

Reverse recovery time

4

ns

Forward voltage

Reverse current

Dimensionsininchesand(millimeters)

Micro-MELF

.049(1.25)

.047(1.20)

.079(2.00)

.071(1.80)

.008(.20)

SOLDERABLE

ENDS