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AR3354S2 Datasheet(PDF) 2 Page - Applied Power Microelectronics Co.,Ltd.

Part # AR3354S2
Description  4-Line Low Capacitance TVS Diode Array
PDF  4 Pages
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Manufacturer  APMICRO [Applied Power Microelectronics Co.,Ltd.]
Direct Link  http://www.appliedpowermicro.com/
Logo APMICRO - Applied Power Microelectronics Co.,Ltd.

AR3354S2 Datasheet(HTML) 2 Page - Applied Power Microelectronics Co.,Ltd.

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Revision
12/2017
2 of 4
www.appliedpowermicro.com
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20µs)
Ppk
300
W
Peak Pulse Current (8/20µs)
IPP
22
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±30
±30
kV
Operating Temperature Range
TJ
−55 to +85
°C
Storage Temperature Range
TSTG
−55 to +150
°C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
3.3
V
Pin 5 to Pin 2
Punch-Through Voltage
VPT
3.5
5.3
V
IT = 2 μA, Pin 5 to Pin 2
Snap-Back Voltage
VSB
2.8
V
ISB = 50mA
Reverse Leakage Current
IR
0.5
µA
VRWM = 3.3V, Pin 5 to Pin 2
Clamping Voltage
VC
6
V
IPP = 1A (8 x 20µs pulse), any I/O
pin to ground
Clamping Voltage
VC
14
V
IPP = 22A (8 x 20µs pulse), any I/
O pin to ground
Junction Capacitance
CJ
1.5
pF
VR = 0V, f = 1MHz, between I/O
pins
Junction Capacitance
CJ
3.0
5.0
pF
VR = 0V, f = 1MHz, any I/O pin to
ground
AR3354S2
Note 1: I/O pins are Pin 1, 3, 4 and 5



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