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IRLI3303 Datasheet(PDF) 2 Page - International Rectifier |
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IRLI3303 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLI3303 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.026 VGS = 10V, ID = 15A ––– ––– 0.040 VGS = 4.5V, ID = 13A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 ––– ––– S VDS = 25V, ID = 20A ––– ––– 25 VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 26 ID = 20A Qgs Gate-to-Source Charge ––– ––– 8.8 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.4 ––– VDD = 15V tr Rise Time ––– 200 ––– ID = 20A td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.5Ω, VGS = 4.5V tf Fall Time ––– 36 ––– RD = 0.70Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 870 ––– VGS = 0V Coss Output Capacitance ––– 340 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nA IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance IGSS LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ns µA nH Ω Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 15A, VGS = 0V trr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 180 280 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A ––– ––– 140 ––– ––– 25 Notes: Uses IRL3303 data and test conditions Pulse width ≤ 300µs; duty cycle ≤ 2%. t=60s, ƒ=60Hz VDD = 25V, starting TJ = 25°C, L = 470µH RG = 25Ω, IAS = 20A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C |
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