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ARGP10D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ARGP10D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 582 - ARG P10D THRU ARG P10M Fast Soft-R ecovery C ontrolled Avalanche R ectifiers Voltage R ange 200 to 1000 Volts Features H igh tem perature m etallurgically bonded constructed Plastic m aterial used carries U nderw riters Laboratory C lassification 94V-0 G lass passivated cavity-free junction H igh m axim um operating tem perature Low leakage current Excellent stability G uaranteed avalanche energy absorption capability H igh tem perature soldering guaranteed: 350 oC / 10 seconds, 0.375”(9.5mm) lead length, 5 lbs., (2.3kg) tension. M echanical D ata C ase: JED EC D O -41 m olded plastic over glass body Lead: P lated Axial leads, solderable per M IL-STD -750, M ethod 2026 Polarity: C olor band denotes cathode end M ounting position: Any W eight: 0.012 ounce, 0.3 gram DO -41 D im ensions in inches and (m illim eters) M axim um R atings and Electrical C haracteristics R ating at 25 ℃ ambient temperature unless otherwise specified. Type N um ber Sym bol ARGP 10D ARGP 10G ARGP 10J ARGP 10K ARGP 10M Units M axim um R ecurrent Peak R everse Voltage VRRM 200 400 600 800 1000 V M axim um R M S Voltage VRMS 140 280 420 560 700 V M axim um D C B locking Voltage VR 200 400 600 800 1000 V M in. R everse A valanche Breakdow n Voltage @ IR =0.1m A V(BR)R 300 500 700 900 1100 V M axim um Average Forw ard R ectified C urrent .375” (9.5m m ) Lead Length @ Ttp = 55℃ IF(AV) 1.3 A Peak Forw ard Surge C urrent @ t= 8.3 m s Single H alf Sine-w ave Superim posed on R ated Load (JEDEC method ) @ t=10m s half sine w ave, Tj=Tjm ax prior to surge, VR =VRRMmax IFSM 30 20 A A N on-repetitive P eak R everse A valanche Energy L=120m H Tj=125 ℃ max prior to Surge, Inductive load Sw itched off ERSM 10 7 m J M axim um Instantaneous Forw ard V oltage @ IF= 1.0A @ IF=1A, Tj=Tj m ax. VF 1.3 1.1 V V M axim um DC Reverse Current @ TJ=25 ℃ at R ated D C Blocking Voltage @ TJ=165 ℃ IR 1.0 100.0 uA uA M axim um R everse R ecovery Tim e ( N ote 1 ) TJ=25 ℃ Trr 250 300 nS Typical Junction C apacitance ( N ote 2 ) Cj 15.0 pF Typical Therm al R esistance (N ote 3) R θJA R θTP 120 55 O C/W O perating Tem perature R ange TJ TJ -65 to + 175 O C Storage Tem perature R ange TSTG TSTG -65 to + 175 O C N otes: 1. R everse R ecovery Test C onditions: IF=0.5A, IR=1.0A R ecover to 0.25A. 2. M easured at 1.0 M H z and Applied R everse Voltage of 4.0 Volts. 3. M ount on C u-Pad Size 5mm x 5mm on P.C .B . |
Similar Part No. - ARGP10D |
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Similar Description - ARGP10D |
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