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FRAF1007G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # FRAF1007G
Description  Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

FRAF1007G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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FRAF1001G THRU FRAF1007G
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
10 Amperes
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
℃/10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
ITO-220AC
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
FRAF
1001G
FRAF
1002G
FRAF
1003G
FRAF
1004G
FRAF
1005G
FRAF
1006G
FRAF
1007G
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800 1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800 1000
V
Maximum Average Forward Rectified Current
@TC = 55
℃
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage
@ 10A
VF
1.3
V
Maximum DC Reverse Current @ TC=25
℃
at Rated DC Blocking Voltage @ TC=125
℃
IR
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250
500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25
℃
Cj
100
pF
Typical Thermal Resistance ( Note 3 )
R
θJC
5.0
℃/W
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
℃
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate
.071(1.8)
MAX
.161(4.1)
.146(3.7)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
2
PIN 1
PIN 2
Case Positive


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