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IXTH50P085 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXTH50P085
Description  isc P-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTH50P085 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXTH50P085 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXTH50P085 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc P-Channel MOSFET Transistor
IXTH50P085
·
FEATURES
·
Static drain-source on-resistance:
RDS(on) ≤ 55mΩ@VGS= -10V
·
Fully characterized avalanche voltage and current
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATION
·
Switched mode power supplies
·
Uninterruptible power supplies
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-85
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
-50
A
IDM
Drain Current-Single Pulsed
-200
A
PD
Total Dissipation @TC=25℃
300
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Junction-to-case thermal resistance
0.42
℃
/W


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