2SB688 datasheet(1/2 Pages) FS

Part #	2SB688

Description	PNP EPITAXIAL SILICON TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

PNP EPITAXIAL SILICON TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION

FEATURES

* Complementary to 2SD718.

* Recommended for 45 ~ 50W Audio Frequency Amplifier

Output Stage.

TO-3P

1

1: BASE

2: COLLECTOR

3: EMITTER

*Pb-free plating product number: 2SB688L

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

V

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

CBO

V

0

2

1

-

V

e

g

a

t

l

o

V

r

e

t

i

m

E

-

r

o

t

c

e

ll

o

C

CEO

V

0

2

1

-

V

e

g

a

t

l

o

V

e

s

a

B

r

e

t

i

m

E

EBO

V

5

-

I

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

A

0

1

-

I

t

n

e

r

u

C

e

s

a

B

A

1

-

Collector Power Dissipation (TC=25℃)

PC

W

0

8

T

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

0

5

1

℃

T

e

g

n

a

R

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

STG

-40 ~ +150

℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-off Current

ICBO

VCB = -120V, IE = 0

-10

µA

Emitter Cut-off Current

IEBO

VEB = -5V, IC = 0

-10

µA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = -50mA, IB= 0

-120

V

h

n

i

a

G

t

n

e

r

u

C

D

FE

VCE = -5V, IC = -1A

55

160

Collector-Emitter Saturation Voltage

VCE(sat)

IC = -5A, IB = -0.5A

-2.5

V

Base-Emitter Voltage

VBE

VCE = -5A, IC= -5A

-1.5

V

f

y

c

n

e

u

q

e

r

F

n

o

i

t

i

s

n

a

r

T

VCE = -5A, IC= -1A

10

MHz

Collector Output Capacitance

Cob

VCB = -10V, IE = 0, f=1MHz

280

pF

CLASSIFICATION OF hFE

O

R

K

N

A

R

0

6

1

~

0

8

0

1

~

5

E

G

N

A

R

2011. 02. 22

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

2SB688

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