2SD718 datasheet(1/2 Pages) FS

Part #	2SD718

Description	NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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NPN EPITAXIAL SILICON TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION

FEATURES

*Recommended for 45~50W Audio Frequency

Amplifier Output Stage.

*Complementary to 2SB688.

TO-3P

1

1: BASE

2:COLLECTOR

3: EMITTER

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

T

I

N

U

S

G

N

I

T

A

R

L

O

B

M

Y

S

R

E

T

E

M

A

R

A

P

V

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

CBO

120

V

e

g

a

t

l

o

V

r

e

t

i

m

E

-

r

o

t

c

e

ll

o

C

CEO

120

V

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

EBO

5

V

A

0

1

c

I

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

I

t

n

e

r

u

C

e

s

a

B

1

A

Collector Power Dissipation (Tc=25℃ )

Pc

80

W

j

T

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

150

℃

g

t

s

T

e

g

n

a

R

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

-55 ~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified))

PARAMETER

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage V(BR)CEO

Ic=50mA,IB=0

120

V

Collector Cut-off Current

CBO

VCB=120V,IE=0

10

μA

Emitter Cut-off CurrentI

EBO

VEB

0

1

0

=

c

I

,

V

5

=

μA

H

n

i

a

G

t

n

e

r

u

C

D

FE

VCE=5V,Ic=1A

55

160

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=6A,IB=0.6A

2.0

V

Base-Emitter Voltage

BE

V

CE

=5V,Ic=5A

1.5

V

Transition Frequency

VCE=5V,Ic=1A

12

MHz

Collector Output Capacitance

ob

VCB=10V,IE=0, f=1MHz

170

pF

CLASSIFICATION OF hFE

O

R

K

N

A

R

0

6

1

-

0

8

0

1

-

5

E

G

N

A

R

2011. 02. 22

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

2SD718

I

Tf

C

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