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RN2964FE Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN2964FE Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 8 page ![]() RN2961FE~RN2966FE 2004-07-01 2 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 Collector cut-off current RN2961FE~2966FE ICEO VCE = −50 V, IB = 0 ⎯ ⎯ −500 nA RN2961FE −0.82 ⎯ −1.52 RN2962FE −0.38 ⎯ −0.71 RN2963FE −0.17 ⎯ −0.33 RN2964FE VEB = −10 V, IC = 0 −0.082 ⎯ −0.15 RN2965FE −0.078 ⎯ −0.145 Emitter cut-off current RN2966FE IEBO VEB = −5 V, IC = 0 −0.074 ⎯ −0.138 mA RN2961FE 30 ⎯ ⎯ RN2962FE 50 ⎯ ⎯ RN2963FE 70 ⎯ ⎯ RN2964FE 80 ⎯ ⎯ RN2965FE 80 ⎯ ⎯ DC current gain RN2966FE hFE VCE = −5 V, IC = −10 mA 80 ⎯ ⎯ Collector-emitter saturation voltage RN2961FE~2966FE VCE (sat) IC = −5 mA, IB = −0.25 mA ⎯ −0.1 −0.3 V RN2961FE −1.1 ⎯ −2.0 RN2962FE −1.2 ⎯ −2.4 RN2963FE −1.3 ⎯ −3.0 RN2964FE −1.5 ⎯ −5.0 RN2965FE −0.6 ⎯ −1.1 Input voltage (ON) RN2966FE VI (ON) VCE = −0.2 V, IC = −5 mA −0.7 ⎯ −1.3 V RN2961FE~2964FE −1.0 ⎯ −1.5 Input voltage (OFF) RN2965FE, 2966FE VI (OFF) VCE = −5 V, IC = −0.1 mA −0.5 ⎯ −0.8 V Transition frequency RN2961FE~2966FE fT VCE = −10 V, IC = −5 mA ⎯ 200 ⎯ MHz Collector output capacitance RN2961FE~2966FE Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 3 6 pF RN2961FE 3.29 4.7 6.11 RN2962FE 7 10 13 RN2963FE 15.4 22 28.6 RN2964FE 32.9 47 61.1 RN2965FE 1.54 2.2 2.86 Input resistor RN2966FE R1 ⎯ 3.29 4.7 6.11 k Ω RN2961FE~2964FE 0.9 1.0 1.1 RN2965FE 0.0421 0.0468 0.0515 Resistor ratio RN2966FE R1/R2 ⎯ 0.09 0.1 0.11 |
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