2SC3835Y datasheet(1/1 Pages) TGS

Part #	2SC3835Y

Description	Silicon NPN Switching Ttransistors

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

200

V

Collector-Emitter Voltage

V

CEO

110

V

Emitter-Base Voltage

V

EBO

8.0

V

Collector Current

I

C

7.0

A

Base Current

I

B

3.0

A

Total Dissipation at

P

tot

60

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

2SC3835Y

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CEO

V

CB=100V, IE=0

—

0.1

mA

Emitter Cut-off Current

I

EBO

V

EB=8.0V, IC=0

—

0.1

mA

Collector-Emitter Sustaining Voltage

V

CEO

I

C=1.0mA, IB=0

110

—

V

DC Current Gain

h

FE(1)

V

CE=4V, IC=3.0A

70

—

h

FE(2)

V

CE=5V, IC=1.0A

100

—

200

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C=3.0A,IB=300mA

—

0.5

V

Base-Emitter Saturation Voltage

V

BE(sat)

I

C=3.0A,IB=300mA

—

1.2

V

Current Gain Bandwidth Product

f

T

V

CE=12V,IC=500mA

—

30

—

MHz

Silicon NPN Switching Ttransistors

Product specification

The is an epitaxial pianar type NPN

silicon transistor

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TO-3PN

TIGER ELECTRONIC CO.,LTD

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2SC3835Y Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd

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