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REF4132-Q1

SNAS795A – FEBRUARY 2020 – REVISED JULY 2020

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Copyright © 2020, Texas Instruments Incorporated

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied. These are stress ratings only and functional operation of the device at these or any other conditions

beyond those specified in the Electrical Characteristics Table is not implied.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Input voltage

–0.3

6

V

Enable voltage

–0.3

V

Output voltage

–0.3

5.5

V

Output short circuit current

20

mA

Operating temperature range

–55

150

°C

Storage temperature range

Tstg

–65

170

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human-body model (HBM), per AEC Q100-

±2500

V

Charged-device model (CDM), per AEC Q100-

011

±1500

(1)

Dropout voltage

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Input Voltage

(1)

5.5

V

Enable Voltage

0

V

Output Current

–10

10

mA

Operating Temperature

–40

25

125

℃

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

DEVICE

UNIT

DBV

5 PINS

Junction-to-ambient thermal resistance

185

°C/W

Junction-to-case (top) thermal resistance

156

°C/W

Junction-to-board thermal resistance

29.6

°C/W

Junction-to-top characterization parameter

33.8

°C/W

Junction-to-board characterization parameter

29.1

°C/W

Junction-to-case (bottom) thermal resistance

N/A

°C/W